Title: SiC Power Devices in High/Medium Power Applications

Subhasish Bhattacharya North Carolina State University, USA

Brief Bio:

Subhashish Bhattacharya (Fellow, IEEE) received the B.E. degree from IIT Roorkee, India, the M.E. degree from IISc, India, and the Ph.D. degree from the University of Wisconsin–Madison, all in electrical engineering. He worked in the FACTS and the Power Quality Group, Westinghouse, which later became part of Siemens Power, from 1998 to 2005. He joined the Department of ECE at NCSU in August 2005, where he is a Duke Energy Distinguished Professor and a Founding Faculty Member of NSF ERC FREEDM Systems Center, Advanced Transportation Energy Center (ATEC), and the U.S. DOE initiative on WBG-based Manufacturing Innovation Institute-PowerAmerica, NCSU. His research is funded by several industries, including NSF, DoE, ARPA-E, US Navy, ONR, and NASA. He has over 600 publications and ten patents with several pending patent applications. His research interests include solid-state transformers, integration of renewable energy resources, MV power converters enabled by HV SiC devices, FACTS, utility applications of power electronics and power quality issues, DC microgrids, high-frequency magnetics, active filters, and application of new power semiconductor devices, such as SiC and GaN for converter topologies.